Heterostructures GaxIn1 –xAsyBizSb1 –y–z/InSb for Photodetector Devices

Abstract

Isoparametric heterostructures Ga_xIn_{1 –x}As_yBi_zSb_{1 –y–z}/InSb for photodetectors operating in a 6- to 12-μm wavelength interval have been manufactured by the method of floating-zone recrystallization with temperature gradient. The introduction of bismuth into GaInAsSb solid solution provides a decrease in bandgap width E_g, the corresponding increase in the working wavelength interval up to 12 μm, and a shift in the photosensitivity maximum to longer wavelengths.