Heterostructures GaxIn1 –xAsyBizSb1 –y–z/InSb for Photodetector Devices
- Autores: Lunin L.1, Lunina M.1, Pashchenko A.1,2, Alfimova D.1, Pashchenko O.1
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Afiliações:
- Southern Scientific Center, Russian Academy of Sciences
- M.I. Platov South Russia State Polytechnic University
- Edição: Volume 45, Nº 8 (2019)
- Páginas: 823-826
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208403
- DOI: https://doi.org/10.1134/S1063785019080285
- ID: 208403
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Resumo
Isoparametric heterostructures GaxIn1 –xAsyBizSb1 –y–z/InSb for photodetectors operating in a 6- to 12-μm wavelength interval have been manufactured by the method of floating-zone recrystallization with temperature gradient. The introduction of bismuth into GaInAsSb solid solution provides a decrease in bandgap width Eg, the corresponding increase in the working wavelength interval up to 12 μm, and a shift in the photosensitivity maximum to longer wavelengths.
Sobre autores
L. Lunin
Southern Scientific Center, Russian Academy of Sciences
Autor responsável pela correspondência
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
M. Lunina
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
A. Pashchenko
Southern Scientific Center, Russian Academy of Sciences; M.I. Platov South Russia State Polytechnic University
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
D. Alfimova
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
O. Pashchenko
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006