Email this article Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density
- Authors: Safonov D.A.1, Vinichenko A.N.1,2, Kargin N.I.1, Vasil’evskii I.S.1
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Affiliations:
- National Research Nuclear University MEPhI
- Baltic Federal University
- Issue: Vol 44, No 12 (2018)
- Pages: 1174-1176
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208156
- DOI: https://doi.org/10.1134/S1063785018120556
- ID: 208156
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Abstract
Using the Shubnikov–de Haas effect, the dependences of electron effective mass m* and transport and quantum momentum relaxation times in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pseudomorphic quantum wells with one-sided silicon δ-doping on the electron density in the range of (1.1–2.6) × 1012 cm–2 have been established. Nonparabolicity coefficient m* in the linear approximation was found to be 0.133m0/eV. Both the transport and quantum momentum relaxation times depend nonmonotonically on Hall electron density nH, which is related to the competition between growth mechanisms of the Fermi momentum and the increasing contribution of large-angle scattering with increasing donor concentration.
About the authors
D. A. Safonov
National Research Nuclear University MEPhI
Author for correspondence.
Email: safonov.dan@mail.ru
Russian Federation, Moscow, 115409
A. N. Vinichenko
National Research Nuclear University MEPhI; Baltic Federal University
Email: safonov.dan@mail.ru
Russian Federation, Moscow, 115409; Kaliningrad, 236041
N. I. Kargin
National Research Nuclear University MEPhI
Email: safonov.dan@mail.ru
Russian Federation, Moscow, 115409
I. S. Vasil’evskii
National Research Nuclear University MEPhI
Email: safonov.dan@mail.ru
Russian Federation, Moscow, 115409
