Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density
- Авторлар: Safonov D.1, Vinichenko A.1,2, Kargin N.1, Vasil’evskii I.1
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Мекемелер:
- National Research Nuclear University MEPhI
- Baltic Federal University
- Шығарылым: Том 44, № 12 (2018)
- Беттер: 1174-1176
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208156
- DOI: https://doi.org/10.1134/S1063785018120556
- ID: 208156
Дәйексөз келтіру
Аннотация
Using the Shubnikov–de Haas effect, the dependences of electron effective mass m* and transport and quantum momentum relaxation times in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pseudomorphic quantum wells with one-sided silicon δ-doping on the electron density in the range of (1.1–2.6) × 1012 cm–2 have been established. Nonparabolicity coefficient m* in the linear approximation was found to be 0.133m0/eV. Both the transport and quantum momentum relaxation times depend nonmonotonically on Hall electron density nH, which is related to the competition between growth mechanisms of the Fermi momentum and the increasing contribution of large-angle scattering with increasing donor concentration.
Авторлар туралы
D. Safonov
National Research Nuclear University MEPhI
Хат алмасуға жауапты Автор.
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409
A. Vinichenko
National Research Nuclear University MEPhI; Baltic Federal University
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409; Kaliningrad, 236041
N. Kargin
National Research Nuclear University MEPhI
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409
I. Vasil’evskii
National Research Nuclear University MEPhI
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409