Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density
- 作者: Safonov D.1, Vinichenko A.1,2, Kargin N.1, Vasil’evskii I.1
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隶属关系:
- National Research Nuclear University MEPhI
- Baltic Federal University
- 期: 卷 44, 编号 12 (2018)
- 页面: 1174-1176
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208156
- DOI: https://doi.org/10.1134/S1063785018120556
- ID: 208156
如何引用文章
详细
Using the Shubnikov–de Haas effect, the dependences of electron effective mass m* and transport and quantum momentum relaxation times in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pseudomorphic quantum wells with one-sided silicon δ-doping on the electron density in the range of (1.1–2.6) × 1012 cm–2 have been established. Nonparabolicity coefficient m* in the linear approximation was found to be 0.133m0/eV. Both the transport and quantum momentum relaxation times depend nonmonotonically on Hall electron density nH, which is related to the competition between growth mechanisms of the Fermi momentum and the increasing contribution of large-angle scattering with increasing donor concentration.
作者简介
D. Safonov
National Research Nuclear University MEPhI
编辑信件的主要联系方式.
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409
A. Vinichenko
National Research Nuclear University MEPhI; Baltic Federal University
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409; Kaliningrad, 236041
N. Kargin
National Research Nuclear University MEPhI
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409
I. Vasil’evskii
National Research Nuclear University MEPhI
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409