Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
- Authors: Blokhin S.A.1, Kryzhanovskaya N.V.2, Moiseev E.I.2, Bobrov M.A.1, Kuz’menkov A.G.1,3, Blokhin A.A.1, Vasil’ev A.P.1,3, Karpovskii I.O.1,4, Zadiranov Y.M.1, Troshkov S.I.1, Nevedomskii V.N.1, Nikitina E.V.2, Maleev N.A.1, Ustinov V.M.1,3
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Affiliations:
- Ioffe Institute
- St. Petersburg Academic University
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- St. Petersburg Electrotechnical University
- Issue: Vol 42, No 10 (2016)
- Pages: 1009-1012
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201593
- DOI: https://doi.org/10.1134/S1063785016100023
- ID: 201593
Cite item
Abstract
The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is investigated. It is demonstrated that using an undoped hybrid vertical optical microcavity formed by a lower undoped semiconductor and an upper distributed dielectric Bragg reflectors allows obtaining laser oscillation up to a temperature of ~100°C at nearly constant threshold optical pump power for an active region consisting of QD layers under optimal spectral mismatch between the position of maximum gain of the QD ground state and the resonance wavelength.
About the authors
S. A. Blokhin
Ioffe Institute
Author for correspondence.
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Kryzhanovskaya
St. Petersburg Academic University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. I. Moiseev
St. Petersburg Academic University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Bobrov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. G. Kuz’menkov
Ioffe Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
A. A. Blokhin
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. P. Vasil’ev
Ioffe Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
I. O. Karpovskii
Ioffe Institute; St. Petersburg Electrotechnical University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
Yu. M. Zadiranov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. I. Troshkov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. Nevedomskii
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
St. Petersburg Academic University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Maleev
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. M. Ustinov
Ioffe Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021