Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
- 作者: Blokhin S.1, Kryzhanovskaya N.2, Moiseev E.2, Bobrov M.1, Kuz’menkov A.1,3, Blokhin A.1, Vasil’ev A.1,3, Karpovskii I.1,4, Zadiranov Y.1, Troshkov S.1, Nevedomskii V.1, Nikitina E.2, Maleev N.1, Ustinov V.1,3
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隶属关系:
- Ioffe Institute
- St. Petersburg Academic University
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- St. Petersburg Electrotechnical University
- 期: 卷 42, 编号 10 (2016)
- 页面: 1009-1012
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201593
- DOI: https://doi.org/10.1134/S1063785016100023
- ID: 201593
如何引用文章
详细
The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is investigated. It is demonstrated that using an undoped hybrid vertical optical microcavity formed by a lower undoped semiconductor and an upper distributed dielectric Bragg reflectors allows obtaining laser oscillation up to a temperature of ~100°C at nearly constant threshold optical pump power for an active region consisting of QD layers under optimal spectral mismatch between the position of maximum gain of the QD ground state and the resonance wavelength.
作者简介
S. Blokhin
Ioffe Institute
编辑信件的主要联系方式.
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Kryzhanovskaya
St. Petersburg Academic University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Moiseev
St. Petersburg Academic University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Bobrov
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Kuz’menkov
Ioffe Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
A. Blokhin
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Vasil’ev
Ioffe Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
I. Karpovskii
Ioffe Institute; St. Petersburg Electrotechnical University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197376
Yu. Zadiranov
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Troshkov
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Nevedomskii
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Nikitina
St. Petersburg Academic University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Maleev
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Ustinov
Ioffe Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021