Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

Аннотация

The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is investigated. It is demonstrated that using an undoped hybrid vertical optical microcavity formed by a lower undoped semiconductor and an upper distributed dielectric Bragg reflectors allows obtaining laser oscillation up to a temperature of ~100°C at nearly constant threshold optical pump power for an active region consisting of QD layers under optimal spectral mismatch between the position of maximum gain of the QD ground state and the resonance wavelength.