A random telegraph signal in tunneling silicon  p – n  junctions with GeSi nanoislands

D. O. Filatov; I. A. Kazantseva; V. G. Shengurov; V. Yu. Chalkov; S. A. Denisov; N. A. Alyabina

doi:10.1134/S1063785016040180

A random telegraph signal in tunneling silicon p–n junctions with GeSi nanoislands

Authors: Filatov D.O.¹, Kazantseva I.A.¹, Shengurov V.G.¹, Chalkov V.Y.¹, Denisov S.A.¹, Alyabina N.A.¹
Affiliations:
1. Lobachevsky State University of Nizhny Novgorod
Issue: Vol 42, No 4 (2016)
Pages: 435-437
Section: Article
URL: https://journals.rcsi.science/1063-7850/article/view/198874
DOI: https://doi.org/10.1134/S1063785016040180
ID: 198874

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

We have experimentally discovered random telegraph signal generation in tunneling silicon p⁺–n⁺ junctions with embedded self-assembled GeSi nanoislands. The observed phenomenon is related to blocking of the electron tunneling via individual GeSi nanoislands due to the generation of holes in, and their thermal emission from, the nanoislands.