A random telegraph signal in tunneling silicon  p – n  junctions with GeSi nanoislands

D. O. Filatov; I. A. Kazantseva; V. G. Shengurov; V. Yu. Chalkov; S. A. Denisov; N. A. Alyabina

doi:10.1134/S1063785016040180

A random telegraph signal in tunneling silicon p–n junctions with GeSi nanoislands

作者: Filatov D.¹, Kazantseva I.¹, Shengurov V.¹, Chalkov V.¹, Denisov S.¹, Alyabina N.¹
隶属关系:
1. Lobachevsky State University of Nizhny Novgorod
期: 卷 42, 编号 4 (2016)
页面: 435-437
栏目: Article
URL: https://journals.rcsi.science/1063-7850/article/view/198874
DOI: https://doi.org/10.1134/S1063785016040180
ID: 198874

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详细

We have experimentally discovered random telegraph signal generation in tunneling silicon p⁺–n⁺ junctions with embedded self-assembled GeSi nanoislands. The observed phenomenon is related to blocking of the electron tunneling via individual GeSi nanoislands due to the generation of holes in, and their thermal emission from, the nanoislands.