A random telegraph signal in tunneling silicon p–n junctions with GeSi nanoislands
- Авторы: Filatov D.1, Kazantseva I.1, Shengurov V.1, Chalkov V.1, Denisov S.1, Alyabina N.1
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Учреждения:
- Lobachevsky State University of Nizhny Novgorod
- Выпуск: Том 42, № 4 (2016)
- Страницы: 435-437
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/198874
- DOI: https://doi.org/10.1134/S1063785016040180
- ID: 198874
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Аннотация
We have experimentally discovered random telegraph signal generation in tunneling silicon p+–n+ junctions with embedded self-assembled GeSi nanoislands. The observed phenomenon is related to blocking of the electron tunneling via individual GeSi nanoislands due to the generation of holes in, and their thermal emission from, the nanoislands.
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Об авторах
D. Filatov
Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: dmitry_filatov@inbox.ru
Россия, Nizhny Novgorod, 603950
I. Kazantseva
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Россия, Nizhny Novgorod, 603950
V. Shengurov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Россия, Nizhny Novgorod, 603950
V. Chalkov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Россия, Nizhny Novgorod, 603950
S. Denisov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Россия, Nizhny Novgorod, 603950
N. Alyabina
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Россия, Nizhny Novgorod, 603950