X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions
- Авторы: Asadchikov V.1, D’yachkova I.1, Zolotov D.1, Krivonosov Y.1, Chukhovskii F.1
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Учреждения:
- Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences
- Выпуск: Том 64, № 5 (2019)
- Страницы: 680-685
- Раздел: Physical Science of Materials
- URL: https://journals.rcsi.science/1063-7842/article/view/203426
- DOI: https://doi.org/10.1134/S1063784219050049
- ID: 203426
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Аннотация
Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness Leff and mean relative deformation Δa/a of a doped layer, are determined depending on the implantation dose and substrate temperature.
Об авторах
V. Asadchikov
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Автор, ответственный за переписку.
Email: sig74@mail.ru
Россия, Moscow, 119333
I. D’yachkova
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Россия, Moscow, 119333
D. Zolotov
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Россия, Moscow, 119333
Yu. Krivonosov
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Россия, Moscow, 119333
F. Chukhovskii
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Россия, Moscow, 119333