X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions
- Autores: Asadchikov V.1, D’yachkova I.1, Zolotov D.1, Krivonosov Y.1, Chukhovskii F.1
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Afiliações:
- Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences
- Edição: Volume 64, Nº 5 (2019)
- Páginas: 680-685
- Seção: Physical Science of Materials
- URL: https://journals.rcsi.science/1063-7842/article/view/203426
- DOI: https://doi.org/10.1134/S1063784219050049
- ID: 203426
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Resumo
Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness Leff and mean relative deformation Δa/a of a doped layer, are determined depending on the implantation dose and substrate temperature.
Sobre autores
V. Asadchikov
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Autor responsável pela correspondência
Email: sig74@mail.ru
Rússia, Moscow, 119333
I. D’yachkova
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Rússia, Moscow, 119333
D. Zolotov
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Rússia, Moscow, 119333
Yu. Krivonosov
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Rússia, Moscow, 119333
F. Chukhovskii
Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics,Russian Academy of Sciences
Email: sig74@mail.ru
Rússia, Moscow, 119333