Field emission of multitip silicon structures with protection coatings


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Resumo

(0.1–0.3 cm2) area multipoint silicon emitters with two-layer metal–fullerene coatings are studied. Field-emission sources that generate currents of several tens of milliamperes that are sufficient for several millimeter- and submillimeter-wavelength microwave sources and compact X-ray sources are developed. Stable operation of multitip silicon field emitters with two-layer metal–fullerene coatings in high-voltage electronic devices is demonstrated at relatively high current output under technical vacuum conditions.

Sobre autores

G. Sominskii

St. Petersburg State Polytechnical University

Autor responsável pela correspondência
Email: sominski@rphf.spbstu.ru
Rússia, Politekhnicheskaya ul. 29, St. Petersburg, 195251

E. Taradaev

St. Petersburg State Polytechnical University

Email: sominski@rphf.spbstu.ru
Rússia, Politekhnicheskaya ul. 29, St. Petersburg, 195251

T. Tumareva

St. Petersburg State Polytechnical University

Email: sominski@rphf.spbstu.ru
Rússia, Politekhnicheskaya ul. 29, St. Petersburg, 195251

M. Givargizov

Shubnikov Institute of Crystallography

Email: sominski@rphf.spbstu.ru
Rússia, Leninskii pr. 59, Moscow, 119333

A. Stepanova

Shubnikov Institute of Crystallography

Email: sominski@rphf.spbstu.ru
Rússia, Leninskii pr. 59, Moscow, 119333


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2016

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