Email this article Field emission of multitip silicon structures with protection coatings
- Authors: Sominskii G.G.1, Taradaev E.P.1, Tumareva T.A.1, Givargizov M.E.2, Stepanova A.N.2
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Affiliations:
- St. Petersburg State Polytechnical University
- Shubnikov Institute of Crystallography
- Issue: Vol 61, No 11 (2016)
- Pages: 1711-1714
- Section: Radiophysics
- URL: https://journals.rcsi.science/1063-7842/article/view/198490
- DOI: https://doi.org/10.1134/S1063784216110256
- ID: 198490
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Abstract
(0.1–0.3 cm2) area multipoint silicon emitters with two-layer metal–fullerene coatings are studied. Field-emission sources that generate currents of several tens of milliamperes that are sufficient for several millimeter- and submillimeter-wavelength microwave sources and compact X-ray sources are developed. Stable operation of multitip silicon field emitters with two-layer metal–fullerene coatings in high-voltage electronic devices is demonstrated at relatively high current output under technical vacuum conditions.
About the authors
G. G. Sominskii
St. Petersburg State Polytechnical University
Author for correspondence.
Email: sominski@rphf.spbstu.ru
Russian Federation, Politekhnicheskaya ul. 29, St. Petersburg, 195251
E. P. Taradaev
St. Petersburg State Polytechnical University
Email: sominski@rphf.spbstu.ru
Russian Federation, Politekhnicheskaya ul. 29, St. Petersburg, 195251
T. A. Tumareva
St. Petersburg State Polytechnical University
Email: sominski@rphf.spbstu.ru
Russian Federation, Politekhnicheskaya ul. 29, St. Petersburg, 195251
M. E. Givargizov
Shubnikov Institute of Crystallography
Email: sominski@rphf.spbstu.ru
Russian Federation, Leninskii pr. 59, Moscow, 119333
A. N. Stepanova
Shubnikov Institute of Crystallography
Email: sominski@rphf.spbstu.ru
Russian Federation, Leninskii pr. 59, Moscow, 119333
