X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

V. E. Asadchikov; I. G. D’yachkova; D. A. Zolotov; Yu. S. Krivonosov; F. N. Chukhovskii

doi:10.1134/S1063784219050049

X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

Авторлар: Asadchikov V.E.¹, D’yachkova I.G.¹, Zolotov D.A.¹, Krivonosov Y.S.¹, Chukhovskii F.N.¹
Мекемелер:
1. Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences
Шығарылым: Том 64, № 5 (2019)
Беттер: 680-685
Бөлім: Physical Science of Materials
URL: https://journals.rcsi.science/1063-7842/article/view/203426
DOI: https://doi.org/10.1134/S1063784219050049
ID: 203426

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Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness L_eff and mean relative deformation Δa/a of a doped layer, are determined depending on the implantation dose and substrate temperature.