SmS/SiC Heterostructure and Its Associated Thermovoltaic Effect
- Авторлар: Kaminskii V.1, Lebedev A.1,2, Solov’ev S.1, Sharenkova N.1
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Мекемелер:
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Шығарылым: Том 64, № 2 (2019)
- Беттер: 181-182
- Бөлім: Solid State
- URL: https://journals.rcsi.science/1063-7842/article/view/202825
- DOI: https://doi.org/10.1134/S1063784219020075
- ID: 202825
Дәйексөз келтіру
Аннотация
A heterostructure based on single-crystal SiC and a polycrystalline SmS thin film has been studied. In the temperature interval 300–456 K, the thermovoltaic effect has been measured in the structure, the amount of which reaches ~12 mV at 456 K. It has been shown that the amount of this effect correlates with its concentration model developed earlier.
Авторлар туралы
V. Kaminskii
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: VladimirKaminski@gmail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Lebedev
Ioffe Institute; St. Petersburg State Electrotechnical University LETI
Email: VladimirKaminski@gmail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376
S. Solov’ev
Ioffe Institute
Email: VladimirKaminski@gmail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Sharenkova
Ioffe Institute
Email: VladimirKaminski@gmail.ioffe.ru
Ресей, St. Petersburg, 194021