Email this article SmS/SiC Heterostructure and Its Associated Thermovoltaic Effect
- Authors: Kaminskii V.V.1, Lebedev A.O.1,2, Solov’ev S.M.1, Sharenkova N.V.1
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Affiliations:
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Issue: Vol 64, No 2 (2019)
- Pages: 181-182
- Section: Solid State
- URL: https://journals.rcsi.science/1063-7842/article/view/202825
- DOI: https://doi.org/10.1134/S1063784219020075
- ID: 202825
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Abstract
A heterostructure based on single-crystal SiC and a polycrystalline SmS thin film has been studied. In the temperature interval 300–456 K, the thermovoltaic effect has been measured in the structure, the amount of which reaches ~12 mV at 456 K. It has been shown that the amount of this effect correlates with its concentration model developed earlier.
About the authors
V. V. Kaminskii
Ioffe Institute
Author for correspondence.
Email: VladimirKaminski@gmail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. O. Lebedev
Ioffe Institute; St. Petersburg State Electrotechnical University LETI
Email: VladimirKaminski@gmail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
S. M. Solov’ev
Ioffe Institute
Email: VladimirKaminski@gmail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Sharenkova
Ioffe Institute
Email: VladimirKaminski@gmail.ioffe.ru
Russian Federation, St. Petersburg, 194021
