Two-photon confocal microscopy in the study of the volume characteristics of semiconductors
- Authors: Kalinushkin V.P.1, Uvarov O.V.1
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Affiliations:
- Prokhorov General Physics Institute
- Issue: Vol 61, No 12 (2016)
- Pages: 1876-1879
- Section: Optics
- URL: https://journals.rcsi.science/1063-7842/article/view/198676
- DOI: https://doi.org/10.1134/S1063784216120203
- ID: 198676
Cite item
Abstract
Zn–Se crystals are used to analyze prospects for application of two-photon confocal microscopy in the study of plane and volume interband and impurity luminescence in semiconductors. Such maps can be formed with a depth step and planar spatial resolution of several micrometers at distances of up to 1 mm from the surface. The method is used to detect luminescence-active inhomogeneities in crystals and study their structure and luminescence characteristics. Prospects for the application of the two-photon confocal microscopy in the study of direct-band-semiconductors and materials of the fourth group are discussed.
About the authors
V. P. Kalinushkin
Prokhorov General Physics Institute
Author for correspondence.
Email: vkalin@kapella.gpi.ru
Russian Federation, ul. Vavilova 38, Moscow, 119991
O. V. Uvarov
Prokhorov General Physics Institute
Email: vkalin@kapella.gpi.ru
Russian Federation, ul. Vavilova 38, Moscow, 119991