Two-photon confocal microscopy in the study of the volume characteristics of semiconductors
- Autores: Kalinushkin V.1, Uvarov O.1
-
Afiliações:
- Prokhorov General Physics Institute
- Edição: Volume 61, Nº 12 (2016)
- Páginas: 1876-1879
- Seção: Optics
- URL: https://journals.rcsi.science/1063-7842/article/view/198676
- DOI: https://doi.org/10.1134/S1063784216120203
- ID: 198676
Citar
Resumo
Zn–Se crystals are used to analyze prospects for application of two-photon confocal microscopy in the study of plane and volume interband and impurity luminescence in semiconductors. Such maps can be formed with a depth step and planar spatial resolution of several micrometers at distances of up to 1 mm from the surface. The method is used to detect luminescence-active inhomogeneities in crystals and study their structure and luminescence characteristics. Prospects for the application of the two-photon confocal microscopy in the study of direct-band-semiconductors and materials of the fourth group are discussed.
Sobre autores
V. Kalinushkin
Prokhorov General Physics Institute
Autor responsável pela correspondência
Email: vkalin@kapella.gpi.ru
Rússia, ul. Vavilova 38, Moscow, 119991
O. Uvarov
Prokhorov General Physics Institute
Email: vkalin@kapella.gpi.ru
Rússia, ul. Vavilova 38, Moscow, 119991