Heat Capacity of Erbium-Doped Gallium-Gadolinium Garnet
- Authors: Lezova I.E.1, Shevchenko E.V.1, Charnaya E.V.1, Khazanov E.N.2, Taranov A.V.2
- 
							Affiliations: 
							- St. Petersburg State University
- Institute of Radioengineering and Electronics
 
- Issue: Vol 60, No 10 (2018)
- Pages: 1948-1952
- Section: Dielectrics
- URL: https://journals.rcsi.science/1063-7834/article/view/204031
- DOI: https://doi.org/10.1134/S1063783418100165
- ID: 204031
Cite item
Abstract
In this paper, we compared the results of a heat capacity study of an erbium-doped gallium gadolinium garnet crystal with data for an undoped garnet. The measurements were carried out in the temperature range from 1.9 to 220 K and in magnetic fields from 0 to 9 T. The temperature dependences of the specific heat were interpreted with allowance for the Schottky contributions due to the Gd3+ and Er3+ ions and the contributions of the thermal vibrations of the crystal lattice. The values of entropy and magnetic entropy are calculated.
About the authors
I. E. Lezova
St. Petersburg State University
							Author for correspondence.
							Email: irina_gospodchikova@mail.ru
				                					                																			                												                	Russian Federation, 							Saint Petersburg, 199034						
E. V. Shevchenko
St. Petersburg State University
														Email: irina_gospodchikova@mail.ru
				                					                																			                												                	Russian Federation, 							Saint Petersburg, 199034						
E. V. Charnaya
St. Petersburg State University
														Email: irina_gospodchikova@mail.ru
				                					                																			                												                	Russian Federation, 							Saint Petersburg, 199034						
E. N. Khazanov
Institute of Radioengineering and Electronics
														Email: irina_gospodchikova@mail.ru
				                					                																			                												                	Russian Federation, 							Moscow, 125009						
A. V. Taranov
Institute of Radioengineering and Electronics
														Email: irina_gospodchikova@mail.ru
				                					                																			                												                	Russian Federation, 							Moscow, 125009						
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