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Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates
Mizerov A.M., Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Timoshnev S.N., Shubina K.Y., Berezovskaya T.N., Mokhov D.V., Buravlev A.D.
Effect of Solid-State Epitaxial Recrystallization on Defect Density in Ultrathin Silicon-on-Sapphire Layers
Fedotov S.D., Statsenko V.N., Egorov N.N., Golubkov S.A.
InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm
Romanov V.V., Ivanov E.V., Moiseev K.D.
Effect of Elastic Stresses on the Formation of Axial Heterojunctions in Ternary AIIIBV Nanowires
Koryakin A.A., Leshchenko E.D., Dubrovskii V.G.
Detectors of Circularly Polarized Radiation Based on Semiconductor Heterostructures with a CoPt Schottky Barrier
Kudrin A.V., Zdoroveyshchev A.V., Vikhrova O.V., Dorokhin M.V., Kalent’eva I.L., Demina P.B.
Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate
Kukushkin S.A., Osipov A.V., Sergeeva O.N., Kiselev D.A., Bogomolov A.A., Solnyshkin A.V., Kaptelov E.Y., Senkevich S.V., Pronin I.P.
A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates
Kukushkin S.A., Sharofidinov S.S.
Electrophysical properties of CdxHg1–xTe (x = 0.3) films grown by molecular beam epitaxy on Si(013) substrates
Varavin V.S., Marin D.V., Yakushev M.V.
Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal
Kukushkin S.A., Osipov A.V.
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Rodin S.N., Lundin W.V., Tsatsulnikov A.F., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P., Kaliteevski M.A.
Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface
Kozhukhov A.S., Aleksandrov I.A., Rzheutski N.V., Lebiadok E.V., Razumets E.A., Zhuravlev K.S., Milakhin D.S., Malin T.V., Mansurov V.G., Galitsyn Y.G.
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