Email this article Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution
- Authors: Grashchenko A.S.1, Kukushkin S.A.1,2, Osipov A.V.3
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Affiliations:
- Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
- Herzen State Pedagogical University
- ITMO University
- Issue: Vol 61, No 12 (2019)
- Pages: 2310-2312
- Section: Semiconductors
- URL: https://journals.rcsi.science/1063-7834/article/view/206785
- DOI: https://doi.org/10.1134/S106378341912014X
- ID: 206785
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Abstract
The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of nanoscale silicon carbide was for the first time measured by nanoindentation method. The structural characteristics of silicon carbide film on silicon were studied by the optical profilometry and spectral ellipsometry; the roughness and thickness of film were m-easured.
About the authors
A. S. Grashchenko
Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
Author for correspondence.
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 199178
S. A. Kukushkin
Institute for Problems in Mechanical Engineering, Russian Academy of Sciences; Herzen State Pedagogical University
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 191186
A. V. Osipov
ITMO University
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 197101
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