Отправить статью по E-mail Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution
- Авторы: Grashchenko A.1, Kukushkin S.1,2, Osipov A.3
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Учреждения:
- Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
- Herzen State Pedagogical University
- ITMO University
- Выпуск: Том 61, № 12 (2019)
- Страницы: 2310-2312
- Раздел: Semiconductors
- URL: https://journals.rcsi.science/1063-7834/article/view/206785
- DOI: https://doi.org/10.1134/S106378341912014X
- ID: 206785
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Аннотация
The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of nanoscale silicon carbide was for the first time measured by nanoindentation method. The structural characteristics of silicon carbide film on silicon were studied by the optical profilometry and spectral ellipsometry; the roughness and thickness of film were m-easured.
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Об авторах
A. Grashchenko
Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: asgrashchenko@bk.ru
Россия, St. Petersburg, 199178
S. Kukushkin
Institute for Problems in Mechanical Engineering, Russian Academy of Sciences; Herzen State Pedagogical University
Email: asgrashchenko@bk.ru
Россия, St. Petersburg, 199178; St. Petersburg, 191186
A. Osipov
ITMO University
Email: asgrashchenko@bk.ru
Россия, St. Petersburg, 197101
