Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution
- 作者: Grashchenko A.1, Kukushkin S.1,2, Osipov A.3
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隶属关系:
- Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
- Herzen State Pedagogical University
- ITMO University
- 期: 卷 61, 编号 12 (2019)
- 页面: 2310-2312
- 栏目: Semiconductors
- URL: https://journals.rcsi.science/1063-7834/article/view/206785
- DOI: https://doi.org/10.1134/S106378341912014X
- ID: 206785
如何引用文章
详细
The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of nanoscale silicon carbide was for the first time measured by nanoindentation method. The structural characteristics of silicon carbide film on silicon were studied by the optical profilometry and spectral ellipsometry; the roughness and thickness of film were m-easured.
作者简介
A. Grashchenko
Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: asgrashchenko@bk.ru
俄罗斯联邦, St. Petersburg, 199178
S. Kukushkin
Institute for Problems in Mechanical Engineering, Russian Academy of Sciences; Herzen State Pedagogical University
Email: asgrashchenko@bk.ru
俄罗斯联邦, St. Petersburg, 199178; St. Petersburg, 191186
A. Osipov
ITMO University
Email: asgrashchenko@bk.ru
俄罗斯联邦, St. Petersburg, 197101