Nanoheterostructures optimization and characteristics improvement for devices based on them


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The AlInGaN and AlGaInP nanoheterostructures design has been optimized by computer simulation in order to use them in optoelectronics. The possibility of improving the performance characteristics of LEDs by 20% is analyzed. The results are presented in the form of current–voltage (I–V) characteristics, dependence of the internal quantum efficiency on the quantum wells quantity, and spectral characteristics. The influence of the In atoms nonuniform distribution in the quantum-well region is determined.

作者简介

O. Rabinovich

National University of Science and Technology MISiS

编辑信件的主要联系方式.
Email: rawork2008@mail.ru
俄罗斯联邦, Moscow, 119049

S. Didenko

National University of Science and Technology MISiS

Email: rawork2008@mail.ru
俄罗斯联邦, Moscow, 119049

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