Отправить статью по E-mail Nanoheterostructures optimization and characteristics improvement for devices based on them
- Авторы: Rabinovich O.I.1, Didenko S.I.1
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Учреждения:
- National University of Science and Technology MISiS
- Выпуск: Том 62, № 3 (2017)
- Страницы: 474-479
- Раздел: Nanomaterials and Ceramics
- URL: https://journals.rcsi.science/1063-7745/article/view/191068
- DOI: https://doi.org/10.1134/S1063774517020237
- ID: 191068
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Аннотация
The AlInGaN and AlGaInP nanoheterostructures design has been optimized by computer simulation in order to use them in optoelectronics. The possibility of improving the performance characteristics of LEDs by 20% is analyzed. The results are presented in the form of current–voltage (I–V) characteristics, dependence of the internal quantum efficiency on the quantum wells quantity, and spectral characteristics. The influence of the In atoms nonuniform distribution in the quantum-well region is determined.
Об авторах
O. Rabinovich
National University of Science and Technology MISiS
Автор, ответственный за переписку.
Email: rawork2008@mail.ru
Россия, Moscow, 119049
S. Didenko
National University of Science and Technology MISiS
Email: rawork2008@mail.ru
Россия, Moscow, 119049
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