电邮这篇文章 Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures
- 作者: Trunkin I.N.1, Presniakov M.Y.1, Vasiliev A.L.1,2
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隶属关系:
- National Research Centre “Kurchatov Institute”
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
- 期: 卷 62, 编号 2 (2017)
- 页面: 265-269
- 栏目: Real Structure of Crystals
- URL: https://journals.rcsi.science/1063-7745/article/view/190814
- DOI: https://doi.org/10.1134/S1063774517020298
- ID: 190814
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详细
Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.
作者简介
I. Trunkin
National Research Centre “Kurchatov Institute”
Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182
M. Presniakov
National Research Centre “Kurchatov Institute”
Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182
A. Vasiliev
National Research Centre “Kurchatov Institute”; Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
编辑信件的主要联系方式.
Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 119333
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