Email this article Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures
- Authors: Trunkin I.N.1, Presniakov M.Y.1, Vasiliev A.L.1,2
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Affiliations:
- National Research Centre “Kurchatov Institute”
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
- Issue: Vol 62, No 2 (2017)
- Pages: 265-269
- Section: Real Structure of Crystals
- URL: https://journals.rcsi.science/1063-7745/article/view/190814
- DOI: https://doi.org/10.1134/S1063774517020298
- ID: 190814
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Abstract
Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.
About the authors
I. N. Trunkin
National Research Centre “Kurchatov Institute”
Email: a.vasiliev56@gmail.com
Russian Federation, Moscow, 123182
M. Yu. Presniakov
National Research Centre “Kurchatov Institute”
Email: a.vasiliev56@gmail.com
Russian Federation, Moscow, 123182
A. L. Vasiliev
National Research Centre “Kurchatov Institute”; Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
Author for correspondence.
Email: a.vasiliev56@gmail.com
Russian Federation, Moscow, 123182; Moscow, 119333
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