Comparison of Transmission Electron Microscopy and X-Ray Reflectometry Data in the Study of the Structure of Silicon-Carbon Nanocomposite Films


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Resumo

Vanadium-doped diamond-like silicon-carbon films have been studied by X-ray reflectometry and transmission electron microscopy. A comparison of the data obtained has shown that the layered structure of the films is retained over an area of about 100 mm2 at a total film thickness of 3–4 µm and layer thicknesses of 10–40 nm. The film surface has been examined by semi-contact probe microscopy. It is demonstrated that the root-mean-square roughness decreases by an order of magnitude (from 2.0 to 0.2 nm) with an increase in the vanadium content in the film from 12 to 17 at %.

Sobre autores

V. Asadchikov

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences; Moscow State University

Email: ross@crys.ras.ru
Rússia, Moscow, 119333; Moscow, 119991

Y. Volkov

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119333

I. Dyachkova

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119333

O. Zhigalina

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences; Bauman Moscow State Technical University

Email: ross@crys.ras.ru
Rússia, Moscow, 119333; Moscow, 105005

V. Kanevsky

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119333

A. Muslimov

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119333

A. Nuzhdin

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119333

S. Pimenov

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119991

B. Roshchin

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Autor responsável pela correspondência
Email: ross@crys.ras.ru
Rússia, Moscow, 119333

A. Rusakov

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119333

D. Khmelenin

Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”
Russian Academy of Sciences

Email: ross@crys.ras.ru
Rússia, Moscow, 119333

S. Shahbazov

Research Institute of Advanced Materials and Technologies

Email: ross@crys.ras.ru
Rússia, Moscow, 105187

M. Shupegin

National Research University “Moscow Power Engineering Institute”

Email: ross@crys.ras.ru
Rússia, Moscow, 111250


Declaração de direitos autorais © Pleiades Publishing, Inc., 2019

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