Comparison of Transmission Electron Microscopy and X-Ray Reflectometry Data in the Study of the Structure of Silicon-Carbon Nanocomposite Films
- 作者: Asadchikov V.1,2, Volkov Y.1, Dyachkova I.1, Zhigalina O.1,3, Kanevsky V.1, Muslimov A.1, Nuzhdin A.1, Pimenov S.4, Roshchin B.1, Rusakov A.1, Khmelenin D.1, Shahbazov S.5, Shupegin M.6
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隶属关系:
- Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences
- Moscow State University
- Bauman Moscow State Technical University
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- Research Institute of Advanced Materials and Technologies
- National Research University “Moscow Power Engineering Institute”
- 期: 卷 64, 编号 5 (2019)
- 页面: 793-797
- 栏目: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/194229
- DOI: https://doi.org/10.1134/S1063774519050031
- ID: 194229
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详细
Vanadium-doped diamond-like silicon-carbon films have been studied by X-ray reflectometry and transmission electron microscopy. A comparison of the data obtained has shown that the layered structure of the films is retained over an area of about 100 mm2 at a total film thickness of 3–4 µm and layer thicknesses of 10–40 nm. The film surface has been examined by semi-contact probe microscopy. It is demonstrated that the root-mean-square roughness decreases by an order of magnitude (from 2.0 to 0.2 nm) with an increase in the vanadium content in the film from 12 to 17 at %.
作者简介
V. Asadchikov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences; Moscow State University
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333; Moscow, 119991
Y. Volkov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
I. Dyachkova
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
O. Zhigalina
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences; Bauman Moscow State Technical University
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333; Moscow, 105005
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
A. Muslimov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
A. Nuzhdin
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
S. Pimenov
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119991
B. Roshchin
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
编辑信件的主要联系方式.
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
A. Rusakov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
D. Khmelenin
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 119333
S. Shahbazov
Research Institute of Advanced Materials and Technologies
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 105187
M. Shupegin
National Research University “Moscow Power Engineering Institute”
Email: ross@crys.ras.ru
俄罗斯联邦, Moscow, 111250