Enviar artigo por via de e-mail Thin-layer GaInSbAsPBi/GaSb heterostructures obtained from liquid phase in a temperature-gradient field
- Autores: Alfimova D.L.1, Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Chebotarev S.N.1,2
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Afiliações:
- Southern Scientific Center
- Platov South Russian State Polytechnic University
- Edição: Volume 62, Nº 1 (2017)
- Páginas: 139-143
- Seção: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/190649
- DOI: https://doi.org/10.1134/S1063774517010047
- ID: 190649
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Resumo
The results of growing thin epitaxial GaInSbAsPBi layers on a GaSb substrate from a liquid bismuth-containing zone in a temperature-gradient field are discussed. The composition and properties of GaInSbAsPBi/GaSb heterostructures are investigated.
Sobre autores
D. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
L. Lunin
Southern Scientific Center
Autor responsável pela correspondência
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
M. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
A. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
S. Chebotarev
Southern Scientific Center; Platov South Russian State Polytechnic University
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006; Novocherkassk, 346428
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