Thin-layer GaInSbAsPBi/GaSb heterostructures obtained from liquid phase in a temperature-gradient field


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Abstract

The results of growing thin epitaxial GaInSbAsPBi layers on a GaSb substrate from a liquid bismuth-containing zone in a temperature-gradient field are discussed. The composition and properties of GaInSbAsPBi/GaSb heterostructures are investigated.

About the authors

D. L. Alfimova

Southern Scientific Center

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

L. S. Lunin

Southern Scientific Center

Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

M. L. Lunina

Southern Scientific Center

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

A. S. Pashchenko

Southern Scientific Center

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

S. N. Chebotarev

Southern Scientific Center; Platov South Russian State Polytechnic University

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, 346428

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