Development of Methods for Controlling Crystal Growth Using Thermal Effect on Melt
- Авторлар: Korobeinikova E.N.1, Prokhorov I.A.1, Strelov V.I.1
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Мекемелер:
- Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics” of Russian Academy of Sciences
- Шығарылым: Том 64, № 3 (2019)
- Беттер: 484-487
- Бөлім: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/194015
- DOI: https://doi.org/10.1134/S1063774519030155
- ID: 194015
Дәйексөз келтіру
Аннотация
The influence of low-energy thermal effects on the structural and concentration inhomogeneities in gallium-doped germanium single crystals, grown by directional solidification, has been investigated. A correlation of the thermal effects with the character of dopant distribution and interface shape change in grown crystals is established.
Авторлар туралы
E. Korobeinikova
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: enkorob@mail.ru
Ресей, Moscow, 119333
I. Prokhorov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Ресей, Moscow, 119333
V. Strelov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Ресей, Moscow, 119333
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