Development of Methods for Controlling Crystal Growth Using Thermal Effect on Melt
- Авторы: Korobeinikova E.N.1, Prokhorov I.A.1, Strelov V.I.1
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Учреждения:
- Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics” of Russian Academy of Sciences
- Выпуск: Том 64, № 3 (2019)
- Страницы: 484-487
- Раздел: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/194015
- DOI: https://doi.org/10.1134/S1063774519030155
- ID: 194015
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Аннотация
The influence of low-energy thermal effects on the structural and concentration inhomogeneities in gallium-doped germanium single crystals, grown by directional solidification, has been investigated. A correlation of the thermal effects with the character of dopant distribution and interface shape change in grown crystals is established.
Об авторах
E. Korobeinikova
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Автор, ответственный за переписку.
Email: enkorob@mail.ru
Россия, Moscow, 119333
I. Prokhorov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Россия, Moscow, 119333
V. Strelov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Россия, Moscow, 119333
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