电邮这篇文章 Development of Methods for Controlling Crystal Growth Using Thermal Effect on Melt
- 作者: Korobeinikova E.N.1, Prokhorov I.A.1, Strelov V.I.1
-
隶属关系:
- Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics” of Russian Academy of Sciences
- 期: 卷 64, 编号 3 (2019)
- 页面: 484-487
- 栏目: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/194015
- DOI: https://doi.org/10.1134/S1063774519030155
- ID: 194015
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
The influence of low-energy thermal effects on the structural and concentration inhomogeneities in gallium-doped germanium single crystals, grown by directional solidification, has been investigated. A correlation of the thermal effects with the character of dopant distribution and interface shape change in grown crystals is established.
作者简介
E. Korobeinikova
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
编辑信件的主要联系方式.
Email: enkorob@mail.ru
俄罗斯联邦, Moscow, 119333
I. Prokhorov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
俄罗斯联邦, Moscow, 119333
V. Strelov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
俄罗斯联邦, Moscow, 119333
补充文件
