Enviar artigo por via de e-mail Development of Methods for Controlling Crystal Growth Using Thermal Effect on Melt
- Autores: Korobeinikova E.N.1, Prokhorov I.A.1, Strelov V.I.1
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Afiliações:
- Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics” of Russian Academy of Sciences
- Edição: Volume 64, Nº 3 (2019)
- Páginas: 484-487
- Seção: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/194015
- DOI: https://doi.org/10.1134/S1063774519030155
- ID: 194015
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Resumo
The influence of low-energy thermal effects on the structural and concentration inhomogeneities in gallium-doped germanium single crystals, grown by directional solidification, has been investigated. A correlation of the thermal effects with the character of dopant distribution and interface shape change in grown crystals is established.
Sobre autores
E. Korobeinikova
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Autor responsável pela correspondência
Email: enkorob@mail.ru
Rússia, Moscow, 119333
I. Prokhorov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Rússia, Moscow, 119333
V. Strelov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Rússia, Moscow, 119333
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