New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate


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Resumo

The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on a GaAs(111)A substrate; it consists of alternating undoped low-temperature grown GaAs (LTG-GaAs) layers and GaAs layers synthesized in the standard high-temperature regime and doped with silicon (GaAs:Si). The As4/Ga flow ratio γ is chosen such as to produce p-type GaAs:Si layers. LTG-GaAs layers were grown at an enlarged γ value. The samples grown on GaAs(100) substrates were single-crystal, whereas the single-crystal growth on GaAs(111)A substrates changed to polycrystalline when the film thickness reached 320–340 nm. The sizes of As precipitates in annealed samples, their distribution over the film thickness, and specific features of their crystal structure have been analyzed.

Sobre autores

I. Trunkin

National Research Centre “Kurchatov Institute”

Email: serp456207@gmail.com
Rússia, Moscow, 123182

A. Vasiliev

National Research Centre “Kurchatov Institute”; Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Russian Academy of Sciences

Email: serp456207@gmail.com
Rússia, Moscow, 123182; Moscow, 119333

I. Vasil’evskii

National Research Nuclear University “MEPhI”

Email: serp456207@gmail.com
Rússia, Moscow, 115409

A. Vinichenko

National Research Nuclear University “MEPhI”

Email: serp456207@gmail.com
Rússia, Moscow, 115409

E. Klimov

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences

Email: serp456207@gmail.com
Rússia, Moscow, 117105

A. Klochkov

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences

Email: serp456207@gmail.com
Rússia, Moscow, 117105

P. Maltsev

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences

Email: serp456207@gmail.com
Rússia, Moscow, 117105

S. Pushkarev

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences

Autor responsável pela correspondência
Email: serp456207@gmail.com
Rússia, Moscow, 117105

G. Galiev

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences

Email: serp456207@gmail.com
Rússia, Moscow, 117105

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