Dielectric Relaxation and Conductivity of CdGa2S4 Single Crystal Grown by the CTR Method

Abstract

CdGa₂S₄ single crystals (a = 5.555 ± 0.002 Å, c = 10.190 ± 0.005 Å) have been grown by the chemical transport reaction (CTR) method, and their dielectric properties have been analyzed. An experimental study of the frequency dependence of the dielectric coefficients and conductivity of the CdGa₂S₄ single crystal has made it possible to reveal the nature of dielectric losses, establish the hopping charge-transfer mechanism, and estimate the parameters of localized states (density and energy spread of states near the Fermi level; mean duration and length of hops; and concentration of deep traps, which implement ac conductivity).