Dielectric Relaxation and Conductivity of CdGa2S4 Single Crystal Grown by the CTR Method
- Авторы: Mustafaeva S.N.1, Asadov S.M.2, Guseinov D.T.1
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Учреждения:
- Institute of Physics, National Academy of Sciences of Azerbaijan
- Nagiyev Institute of Catalysis and Inorganic Chemistry, National Academy of Sciences of Azerbaijan
- Выпуск: Том 63, № 7 (2018)
- Страницы: 1160-1162
- Раздел: Physical Properties of Crystals
- URL: https://journals.rcsi.science/1063-7745/article/view/193462
- DOI: https://doi.org/10.1134/S1063774518070155
- ID: 193462
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Аннотация
CdGa2S4 single crystals (a = 5.555 ± 0.002 Å, c = 10.190 ± 0.005 Å) have been grown by the chemical transport reaction (CTR) method, and their dielectric properties have been analyzed. An experimental study of the frequency dependence of the dielectric coefficients and conductivity of the CdGa2S4 single crystal has made it possible to reveal the nature of dielectric losses, establish the hopping charge-transfer mechanism, and estimate the parameters of localized states (density and energy spread of states near the Fermi level; mean duration and length of hops; and concentration of deep traps, which implement ac conductivity).
Об авторах
S. Mustafaeva
Institute of Physics, National Academy of Sciences of Azerbaijan
Автор, ответственный за переписку.
Email: solmust@gmail.com
Азербайджан, Baku, AZ1143
S. Asadov
Nagiyev Institute of Catalysis and Inorganic Chemistry, National Academy of Sciences of Azerbaijan
Email: solmust@gmail.com
Азербайджан, Baku, AZ1143
D. Guseinov
Institute of Physics, National Academy of Sciences of Azerbaijan
Email: solmust@gmail.com
Азербайджан, Baku, AZ1143
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