Dielectric Relaxation and Conductivity of CdGa2S4 Single Crystal Grown by the CTR Method
- 作者: Mustafaeva S.N.1, Asadov S.M.2, Guseinov D.T.1
-
隶属关系:
- Institute of Physics, National Academy of Sciences of Azerbaijan
- Nagiyev Institute of Catalysis and Inorganic Chemistry, National Academy of Sciences of Azerbaijan
- 期: 卷 63, 编号 7 (2018)
- 页面: 1160-1162
- 栏目: Physical Properties of Crystals
- URL: https://journals.rcsi.science/1063-7745/article/view/193462
- DOI: https://doi.org/10.1134/S1063774518070155
- ID: 193462
如何引用文章
详细
CdGa2S4 single crystals (a = 5.555 ± 0.002 Å, c = 10.190 ± 0.005 Å) have been grown by the chemical transport reaction (CTR) method, and their dielectric properties have been analyzed. An experimental study of the frequency dependence of the dielectric coefficients and conductivity of the CdGa2S4 single crystal has made it possible to reveal the nature of dielectric losses, establish the hopping charge-transfer mechanism, and estimate the parameters of localized states (density and energy spread of states near the Fermi level; mean duration and length of hops; and concentration of deep traps, which implement ac conductivity).
作者简介
S. Mustafaeva
Institute of Physics, National Academy of Sciences of Azerbaijan
编辑信件的主要联系方式.
Email: solmust@gmail.com
阿塞拜疆, Baku, AZ1143
S. Asadov
Nagiyev Institute of Catalysis and Inorganic Chemistry, National Academy of Sciences of Azerbaijan
Email: solmust@gmail.com
阿塞拜疆, Baku, AZ1143
D. Guseinov
Institute of Physics, National Academy of Sciences of Azerbaijan
Email: solmust@gmail.com
阿塞拜疆, Baku, AZ1143
补充文件
