Study of the specific features of single-crystal boron microstructure

A. E. Blagov; A. L. Vasil’ev; V. P. Dmitriev; A. G. Ivanova; A. G. Kulikov; N. V. Marchenkov; P. A. Popov; M. Yu. Presnyakov; P. A. Prosekov; Yu. V. Pisarevskii; A. V. Targonskii; T. S. Chernaya; D. Yu. Chernyshov

doi:10.1134/S1063774517050030

Study of the specific features of single-crystal boron microstructure

Authors: Blagov A.E.¹^,2, Vasil’ev A.L.¹^,2, Dmitriev V.P.³, Ivanova A.G.¹, Kulikov A.G.¹^,2, Marchenkov N.V.¹^,2, Popov P.A.⁴, Presnyakov M.Y.², Prosekov P.A.¹^,2, Pisarevskii Y.V.¹^,2, Targonskii A.V.¹^,2, Chernaya T.S.¹, Chernyshov D.Y.³
Affiliations:
1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
2. National Research Centre “Kurchatov Institute”
3. Swiss–Norwegian Beamlines at the European Synchrotron Radiation Facility
4. Bryansk State University
Issue: Vol 62, No 5 (2017)
Pages: 692-702
Section: Diffraction and Scattering of Ionizing Radiations
URL: https://journals.rcsi.science/1063-7745/article/view/191270
DOI: https://doi.org/10.1134/S1063774517050030
ID: 191270

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Abstract

A complex study of the structure of β-boron single crystal grown by the floating-zone method, with sizes significantly exceeding the analogs known in the literature, has been performed. The study includes X-ray diffraction analysis and X-ray diffractometry (measurement of pole figures and rocking curves), performed on both laboratory and synchrotron sources; atomic-resolution scanning transmission electron microscopy with spherical aberration correction; and energy-dispersive microanalysis. X-ray diffraction analysis using synchrotron radiation has been used to refine the β-boron structure and find impurity Si atoms. The relative variations in the unit-cell parameters a and c for the crystal bulk are found to be δa/a ≈ 0.4 and δc/c ≈ 0.1%. X-ray diffractometry has revealed that the single-crystal growth axis coincides with the [\(2\bar 2013\)] crystallographic axis and makes an angle of 21.12° with the [0001] threefold axis. Electron microscopy data have confirmed that the sample under study is a β-boron crystal, which may contain 0.3–0.4 at % Si as an impurity. Planar defects (stacking faults and dislocations) are found. The results of additional measurements of the temperature dependence of the thermal conductivity of the crystal in the range of 50–300 K are indicative of its high structural quality.

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Study of the specific features of single-crystal boron microstructure

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Abstract

About the authors

Supplementary files