Microstructural study of He+-implanted and thermally annealed silicon-on-sapphire layers


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The effect of He+ ion implantation and subsequent annealing on the silicon-on-sapphire microstructure is studied by transmission electron microscopy and X-ray diffraction analysis. It is established that He+ ion implantation leads to the formation of defects in the Si layer and α-Al2O3, while subsequent annealing causes dissociation of radiation defects in Si and formation of nanopores in α-Al2O3. The effect of implanted-ion dose and annealing temperature on the parameters of the porous α-Al2O3 layer and structural quality of the Si layer is investigated.

作者简介

Yu. Chesnokova

National Research Center “Kurchatov Institute,”

Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182

P. Aleksandrova

National Research Center “Kurchatov Institute,”

Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182

N. Belova

National Research Center “Kurchatov Institute,”

Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182

S. Shemardov

National Research Center “Kurchatov Institute,”

Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182

A. Vasiliev

National Research Center “Kurchatov Institute,”; Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”

编辑信件的主要联系方式.
Email: a.vasiliev56@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 119333

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