Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast
- Authors: Argunova T.S.1, Kohn V.G.2, Lim J.H.3, Je J.H.4
-
Affiliations:
- Ioffe Institute
- National Research Centre “Kurchatov Institute”
- Pohang Accelerator Laboratory
- Department of Materials Science and Engineering
- Issue: Vol 61, No 6 (2016)
- Pages: 914-917
- Section: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190360
- DOI: https://doi.org/10.1134/S1063774516040027
- ID: 190360
Cite item
Abstract
The morphology of a macrodefect in a single-crystal silicon carbide wafer has been investigated by the computer simulation of an experimental X-ray phase-contrast image. A micropipe, i.e., a long cavity with a small (elliptical in the general case) cross section, in a single crystal has been considered as a macrodefect. A far-field image of micropipe has been measured with the aid of synchrotron radiation without a monochromator. The parameters of micropipe elliptical cross section are determined based on one projection in two directions: parallel and perpendicular to the X-ray beam propagation direction, when scanning along the pipe axis. The results demonstrate the efficiency of the phase contrast method supplemented with computer simulation for studying such macrodefects when the defect position in the sample volume is unknown beforehand.
About the authors
T. S. Argunova
Ioffe Institute
Author for correspondence.
Email: argunova2002@mail.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. G. Kohn
National Research Centre “Kurchatov Institute”
Email: argunova2002@mail.ru
Russian Federation, pl. Akademika Kurchatova 1, Moscow, 123182
J. H. Lim
Pohang Accelerator Laboratory
Email: argunova2002@mail.ru
Korea, Republic of, Pohang, 790-834
J. H. Je
Department of Materials Science and Engineering
Email: argunova2002@mail.ru
Korea, Republic of, Pohang, 790-784