Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast
- Авторы: Argunova T.S.1, Kohn V.G.2, Lim J.H.3, Je J.H.4
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Учреждения:
- Ioffe Institute
- National Research Centre “Kurchatov Institute”
- Pohang Accelerator Laboratory
- Department of Materials Science and Engineering
- Выпуск: Том 61, № 6 (2016)
- Страницы: 914-917
- Раздел: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190360
- DOI: https://doi.org/10.1134/S1063774516040027
- ID: 190360
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Аннотация
The morphology of a macrodefect in a single-crystal silicon carbide wafer has been investigated by the computer simulation of an experimental X-ray phase-contrast image. A micropipe, i.e., a long cavity with a small (elliptical in the general case) cross section, in a single crystal has been considered as a macrodefect. A far-field image of micropipe has been measured with the aid of synchrotron radiation without a monochromator. The parameters of micropipe elliptical cross section are determined based on one projection in two directions: parallel and perpendicular to the X-ray beam propagation direction, when scanning along the pipe axis. The results demonstrate the efficiency of the phase contrast method supplemented with computer simulation for studying such macrodefects when the defect position in the sample volume is unknown beforehand.
Об авторах
T. Argunova
Ioffe Institute
Автор, ответственный за переписку.
Email: argunova2002@mail.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Kohn
National Research Centre “Kurchatov Institute”
Email: argunova2002@mail.ru
Россия, pl. Akademika Kurchatova 1, Moscow, 123182
J. Lim
Pohang Accelerator Laboratory
Email: argunova2002@mail.ru
Республика Корея, Pohang, 790-834
J. Je
Department of Materials Science and Engineering
Email: argunova2002@mail.ru
Республика Корея, Pohang, 790-784
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