Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast
- Авторлар: Argunova T.S.1, Kohn V.G.2, Lim J.H.3, Je J.H.4
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Мекемелер:
- Ioffe Institute
- National Research Centre “Kurchatov Institute”
- Pohang Accelerator Laboratory
- Department of Materials Science and Engineering
- Шығарылым: Том 61, № 6 (2016)
- Беттер: 914-917
- Бөлім: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190360
- DOI: https://doi.org/10.1134/S1063774516040027
- ID: 190360
Дәйексөз келтіру
Аннотация
The morphology of a macrodefect in a single-crystal silicon carbide wafer has been investigated by the computer simulation of an experimental X-ray phase-contrast image. A micropipe, i.e., a long cavity with a small (elliptical in the general case) cross section, in a single crystal has been considered as a macrodefect. A far-field image of micropipe has been measured with the aid of synchrotron radiation without a monochromator. The parameters of micropipe elliptical cross section are determined based on one projection in two directions: parallel and perpendicular to the X-ray beam propagation direction, when scanning along the pipe axis. The results demonstrate the efficiency of the phase contrast method supplemented with computer simulation for studying such macrodefects when the defect position in the sample volume is unknown beforehand.
Авторлар туралы
T. Argunova
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: argunova2002@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Kohn
National Research Centre “Kurchatov Institute”
Email: argunova2002@mail.ru
Ресей, pl. Akademika Kurchatova 1, Moscow, 123182
J. Lim
Pohang Accelerator Laboratory
Email: argunova2002@mail.ru
Корей Республикасы, Pohang, 790-834
J. Je
Department of Materials Science and Engineering
Email: argunova2002@mail.ru
Корей Республикасы, Pohang, 790-784
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