Morphological stability of sapphire crystallization front
- 作者: Baranov V.V.1, Nizhankovskyi S.V.1
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隶属关系:
- Institute for Single Crystals
- 期: 卷 61, 编号 2 (2016)
- 页面: 331-335
- 栏目: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/189942
- DOI: https://doi.org/10.1134/S1063774516020048
- ID: 189942
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详细
The main factors and specificity of growth conditions for sapphire and Ti:sapphire crystals, which affect the morphological stability of the crystal–melt interface, have been investigated with allowance for the concentration and radiative melt supercooling. It is shown that the critical sapphire growth rate is determined to a great extent by the optical transparency of the melt and the mixing conditions near the crystallization front.
作者简介
V. Baranov
Institute for Single Crystals
编辑信件的主要联系方式.
Email: baranov.isc@gmail.com
乌克兰, pr. Lenina 60, Kharkov, 61178
S. Nizhankovskyi
Institute for Single Crystals
Email: baranov.isc@gmail.com
乌克兰, pr. Lenina 60, Kharkov, 61178
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