Morphological stability of sapphire crystallization front
- Авторлар: Baranov V.V.1, Nizhankovskyi S.V.1
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Мекемелер:
- Institute for Single Crystals
- Шығарылым: Том 61, № 2 (2016)
- Беттер: 331-335
- Бөлім: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/189942
- DOI: https://doi.org/10.1134/S1063774516020048
- ID: 189942
Дәйексөз келтіру
Аннотация
The main factors and specificity of growth conditions for sapphire and Ti:sapphire crystals, which affect the morphological stability of the crystal–melt interface, have been investigated with allowance for the concentration and radiative melt supercooling. It is shown that the critical sapphire growth rate is determined to a great extent by the optical transparency of the melt and the mixing conditions near the crystallization front.
Негізгі сөздер
Авторлар туралы
V. Baranov
Institute for Single Crystals
Хат алмасуға жауапты Автор.
Email: baranov.isc@gmail.com
Украина, pr. Lenina 60, Kharkov, 61178
S. Nizhankovskyi
Institute for Single Crystals
Email: baranov.isc@gmail.com
Украина, pr. Lenina 60, Kharkov, 61178
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