Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions
- 作者: Brinkevich D.1, Kharchenko A.1, Prosolovich V.1, Odzhaev V.1, Brinkevich S.1, Yankovskii Y.1
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隶属关系:
- Belarusian State University
- 期: 卷 48, 编号 3 (2019)
- 页面: 197-201
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187133
- DOI: https://doi.org/10.1134/S1063739719020021
- ID: 187133
如何引用文章
详细
We investigate FP9120 positive photoresist films 1.8 μm thick that are spin-coated on the surface of KDB-10 (111) silicon wafers and implanted with В+ and Р+ ions by measuring the reflection’s spectra. It is shown that implantation reduces the refractive index of the photoresist. In the opacity region of the photoresist film, the reflection coefficient grows with an increasing implantation dose, especially in the case of P+ ion implantation. The spectral dependences of the optical length for the implanted photoresist films have two regions with anomalous dispersion near the wavelengths of 350 and 430 nm, which correspond to the absorption bands of naphthoquinone diazide molecules.
作者简介
D. Brinkevich
Belarusian State University
编辑信件的主要联系方式.
Email: Brinkevich@bsu.by
白俄罗斯, Minsk, 220013
A. Kharchenko
Belarusian State University
Email: Brinkevich@bsu.by
白俄罗斯, Minsk, 220013
V. Prosolovich
Belarusian State University
Email: Brinkevich@bsu.by
白俄罗斯, Minsk, 220013
V. Odzhaev
Belarusian State University
Email: Brinkevich@bsu.by
白俄罗斯, Minsk, 220013
S. Brinkevich
Belarusian State University
Email: Brinkevich@bsu.by
白俄罗斯, Minsk, 220013
Yu. Yankovskii
Belarusian State University
Email: Brinkevich@bsu.by
白俄罗斯, Minsk, 220013