Optimization Problems of Nanosized Semiconductor Heterostructures
- 作者: Abgaryan K.1
-
隶属关系:
- Dorodnitsyn Computing Center, Federal Research Center Informatics and Management, Russian Academy of Sciences
- 期: 卷 47, 编号 8 (2018)
- 页面: 583-588
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187041
- DOI: https://doi.org/10.1134/S1063739718080024
- ID: 187041
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详细
A new approach is presented that allows solving optimization problems of nanosized semiconductor heterostructures. We have formulated and solved the problem of determining the optimal doping of a barrier layer consisting of a number of sublayers, which provides a preset concentration of electrons in the conduction channel of semiconductor heterostructures. To solve the problem, effective optimization algorithms based on gradient methods are developed. As an example, an Al0.25GaN/GaN heterostructure with a total barrier layer thickness of 30 nm is considered. The results obtained in the numerical experiment are consistent with the modern trend towards the transition from a homogeneous doping profile to a planar δ-doping in field-effect transistor manufacturing technologies. The developed technique of mathematical simulation and optimization can be used in field-effect transistor manufacturing technologies. The approaches presented in the work create the conditions for the automated design of such structures.
作者简介
K. Abgaryan
Dorodnitsyn Computing Center, Federal Research Center Informatics and Management,Russian Academy of Sciences
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