Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers
- 作者: Egorkin V.1, Zemlyakov V.1, Nezhentsev A.1, Garmash V.1, Kalyuzhnyi N.2, Mintairov S.2
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隶属关系:
- Moscow Institute of Electronic Technology
- Ioffe Physical Technical Institute
- 期: 卷 47, 编号 6 (2018)
- 页面: 388-392
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186917
- DOI: https://doi.org/10.1134/S1063739718060045
- ID: 186917
如何引用文章
详细
The conditions for the growth of epitaxial layers are considered and the resistance of alloyed ohmic contacts to tellurium-doped gallium arsenide layers is studied. The use of the (AuGe eutectic alloy)-Ni–Au composition alloy of ohmic contacts to the gallium arsenide layers with electron conductivity, including use as a contact layer of a narrow-band (In0.5Ga0.5As), makes it possible to achieve a resistance of 10–7 Ohm cm2, in the best case; however, this leads to a deterioration of the surface morphology. In this paper, we study the issues of doping the GaAs contact layer by tellurium to the maximum concentration of 2.5 × 1019 cm–3. In this case, the resistance of the ohmic contacts proves to be less than 5 × 10–8 Оhm cm2, simultaneously with the improvement of the semiconductor’s surface morphology.
作者简介
V. Egorkin
Moscow Institute of Electronic Technology
Email: alekseyy_nejencev@rambler.ru
俄罗斯联邦, Moscow, 124498
V. Zemlyakov
Moscow Institute of Electronic Technology
Email: alekseyy_nejencev@rambler.ru
俄罗斯联邦, Moscow, 124498
A. Nezhentsev
Moscow Institute of Electronic Technology
编辑信件的主要联系方式.
Email: alekseyy_nejencev@rambler.ru
俄罗斯联邦, Moscow, 124498
V. Garmash
Moscow Institute of Electronic Technology
Email: alekseyy_nejencev@rambler.ru
俄罗斯联邦, Moscow, 124498
N. Kalyuzhnyi
Ioffe Physical Technical Institute
Email: alekseyy_nejencev@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
S. Mintairov
Ioffe Physical Technical Institute
Email: alekseyy_nejencev@rambler.ru
俄罗斯联邦, St. Petersburg, 194021