TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric
- 作者: Petrosyants K.1,2, Popov D.1, Sambursky L.1,2, Kharitonov I.1
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隶属关系:
- National Research University Higher School of Economics
- Institute for Design Problems in Microelectronics
- 期: 卷 45, 编号 7 (2016)
- 页面: 460-463
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185864
- DOI: https://doi.org/10.1134/S106373971607012X
- ID: 185864
如何引用文章
详细
The models of electrophysical effects builtinto Sentaurus TCAD have been tested. The models providing an adequate modeling of deep submicron high-k MOSFETs have been selected. The gate and drain leakage currents for 45 nm MOSFETs with polysilicon gate and SiO2, SiO2/HfO2 and HfO2 gate dielectrics have been calculated using TCAD. It has been shown that the replacement of the traditional SiO2 gate oxide by an equivalent HfO2 dielectric reduces the gate leakage current by several orders of magnitude due to the elimination of the impact of the tunneling effect. Besides, the threshold voltage, saturation drain current, mobility, transconductance, etc., degrade within a range of 10–20%.
作者简介
K. Petrosyants
National Research University Higher School of Economics; Institute for Design Problems in Microelectronics
编辑信件的主要联系方式.
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow, 115054; Moscow, 124681
D. Popov
National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow, 115054
L. Sambursky
National Research University Higher School of Economics; Institute for Design Problems in Microelectronics
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow, 115054; Moscow, 124681
I. Kharitonov
National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow, 115054