Mo/Al/Mo/Au-based ohmic contacts to AlGaN/GaN heterostructures
- 作者: Kondakov M.1,2, Chernykh S.1,2, Chernykh A.1,2, Gladysheva N.2, Dorofeev A.2, Didenko S.1, Shcherbachev K.1, Tabachkova N.1, Kaprov D.2
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隶属关系:
- National University of Science and Technology MISiS
- Joint-Stock Company “Scientific & Production Enterprise “Pulsar”
- 期: 卷 45, 编号 6 (2016)
- 页面: 402-409
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185796
- DOI: https://doi.org/10.1134/S1063739716060032
- ID: 185796
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详细
Mo/Al/Mo/Au metallization scheme as an ohmic contact to undoped AlGaN/GaN heterostructures was investigated. The optimal thicknesses of the metal layers were determined: Mo (10 nm)/Al (60 nm)/ Mo (50 nm)/Au (50 nm). The specific contact resistance of the fabricated ohmic contact is 4.7 × 10–7 Ohm cm2 (0.14 Ohm mm). The microstructure of the contact after annealing was investigated using scanning and transmission electron microscopy, X-ray diffractometry and energy-dispersive X-ray spectroscopy. It is shown that a noticeable alloying of metallization into semiconductor upon annealing does not occur, but strong mixing of metals takes place. X-ray diffraction analysis demonstrated the presence of interfacial compounds, namely, Al2Au, Al3 + xMo1–x, AlMo3, Al12Mo, GaMo3 and GaAu2. Investigations of the phase composition of films depending on the thickness ratio of the metallization layers have shown that the formation of Al2Au phase has a negative effect on the contact surface morphology, and the formation of GaMo3, AlxMoy phases likely plays the most important role in the ohmic contact formation, which was also confirmed by the method of energy-dispersive analysis.
作者简介
M. Kondakov
National University of Science and Technology MISiS; Joint-Stock Company “Scientific & Production Enterprise “Pulsar”
编辑信件的主要联系方式.
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 105187
S. Chernykh
National University of Science and Technology MISiS; Joint-Stock Company “Scientific & Production Enterprise “Pulsar”
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 105187
A. Chernykh
National University of Science and Technology MISiS; Joint-Stock Company “Scientific & Production Enterprise “Pulsar”
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 105187
N. Gladysheva
Joint-Stock Company “Scientific & Production Enterprise “Pulsar”
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 105187
A. Dorofeev
Joint-Stock Company “Scientific & Production Enterprise “Pulsar”
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 105187
S. Didenko
National University of Science and Technology MISiS
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 119991
K. Shcherbachev
National University of Science and Technology MISiS
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 119991
N. Tabachkova
National University of Science and Technology MISiS
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 119991
D. Kaprov
Joint-Stock Company “Scientific & Production Enterprise “Pulsar”
Email: kondakovmix@mail.ru
俄罗斯联邦, Moscow, 105187